Монография. Boston-London, Artech House, Inc., 2004, 212 pp.
Silicon Carbide Overview
General Properties
High-Temperature SiC-FET Chemical Gas Sensors CHAPTER 3
Silicon Carbide Technology and Power Electronics Applications
Advances in Selective Doping of SiC Via Ion Implantation
Power SiC MOSFETS
Power and RF BJTs in 4H-SiC: Device Design and Technology